20 V Dual N-Channel MOSFET
Micro Commercial Components's 20 V dual N-channel MOSFET is meticulously designed for high-speed switching
MCC's SI3134KU6 is a 20 V dual N-channel MOSFET that was meticulously designed for high-speed switching. Its ultra-compact DFN1010 package only takes up 1 mm x 1 mm of space while delivering a low input-gate charge and ESD-protected gate input up to 2 kV.
When component density counts, MCC's MOSFET is the product for the job for computing, industrial, telecom, or consumer applications.
The trench LV MOSFET technology combines with MCC reliability to offer engineers the ideal component for motherboards, charging circuits, automation controls, and more.
- Trench low voltage (LV) MOSFET technology
- Dual N-channel MOSFET with single-function
- Compact 1 mm x 1 mm size
- DFN1010 package
- ESD protected up to 2 kV
- Low gate-charge
- 250 mΩ RDS(ON)
- Ideal for high-speed switching
- Space efficiency
- High-speed performance
- Enhanced durability
- Built-in ESD protection up to 2 kV
- Energy-saving design
- Energy-efficient operation is assured due to a low gate charge
- Smartphone and tablet power management
- Portable device charging circuits
- Motherboard voltage regulation modules
- High-speed computing interface drivers
- Industrial automated machinery control systems
- Industrial sensor interfaces
- Line drivers for high-speed data transmission
20 V Dual N-Channel MOSFET
图片 | 制造商零件编号 | 描述 | 技术 | 配置 | FET 功能 | 可供货数量 | 价格 | 查看详情 | |
---|---|---|---|---|---|---|---|---|---|
SI3134KU6-TP | SMALL SIGNAL MOSFET | MOSFET(金属氧化物) | 2 个 N 沟道 | - | 0 - 立即发货 | $3.49 | 查看详情 |