Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SIHS36N50D-GE3 D SERIES POWER MOSFET SUPER-247, Vishay Siliconix	530 In Stock	1 : ¥52.13000 Tube	D	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	36A (Tc)	10V	130mOhm @ 18A, 10V	5V @ 250µA	125 nC @ 10 V	±30V	3233 pF @ 100 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHD3N50D-BE3 MOSFET N-CH 500V 3A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥7.31000 Tube	D	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	3A (Tc)	10V	3.2Ohm @ 1.5A, 10V	5V @ 250µA	12 nC @ 10 V	±30V	175 pF @ 100 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHD3N50DT4-GE3 MOSFET N-CH 500V 3A DPAK Vishay Siliconix	0 In Stock Check Lead Time	3,000 : ¥2.76477 Tube	D	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	3A (Tc)	10V	3.2Ohm @ 1.5A, 10V	5V @ 250µA	12 nC @ 10 V	±30V	175 pF @ 100 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.